RB151 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes)

BL ^{GALAXY ELECTRICAL}
RB151(G) - - - RB157(G)
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
FEATURES
Rating to 1000V PRV
Surge overload rating to 50 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Mounting Position: Any
Glass passivated chip junctions
WOM
B
A
A
RB15
WO
WOM
.150(3.8)
.130(3.3)
.305(7.75)
.265(6.73)
.220(6.73)
.180(4.6)
B
.360(9.1)
.340(8.6)
.395(10.0)
.355(9.0)
.340(8.6)
.300(7.6)
MIN
1.27(32.3)
MIN
1.20(30.5)
POS.
LEAD
.220
.180
(5.6)
(4.6)
.032(.81)
.028(.71)
DIA
.220
.180
(5.6)
(4.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @T_A=55
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Operating junction temperature range
Storage temperature range
RB151 RB152 RB153 RB154 RB155 RB156 RB157 UNITS
V_RRM 50
100 200 400 600 800 1000
V
V_RMS 35
70 140 280 420 560 700
V
V_DC
50
100 200 400 600 800 1000
V
I_F(AV)
1.5
A
I_FSM
V_F
I_R
T_J
T_STG
50.0
1.0
10.0
0.5
- 55 ---- + 125
- 55 ---- + 150
A
V
μA
mA
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Document Number 0287012
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1.