MUR470 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

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HIGH EFFICIENCY RECTIFIER
MUR470 --- MUR4100
VOLTAGE RANGE: 700---1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Easily cleaned with freon, alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27, molded plastic
Terminals: Axial leads,solderable per MIL-STD- 202 ,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces, 1.15 grams
Mounting: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MUR470 MUR480 MUR490 MUR4100 UNITS
Maximum recurrent peak reverse voltage
V_RRM 700
800
900
Maximum RMS voltage
V_RMS 490
560
630
Maximum DC blocking voltage
V_DC
700
800
900
Maximum average forw ard rectified current
9.5mm lead length, @T_A=75
I_F(AV)
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 4.0A
I_FSM
V_F
Maximum reverse current @T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
C_J
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
4.0
125.0
1.8
10.0
100.0
75
50
30
- 55 ----- + 150
- 55 ----- + 150
Document Number 0262022
BLGALAXY ELECTRICAL
1000
V
700
V
1000
V
A
A
V
A
ns
pF
/W
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