MMSTA92 Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.(P_C=200mW)
z Epitaxial planar die construction.
z Complementary to MMSTA42.
z Also available in lead free version.
Pb
Lead-free
MMSTA92
APPLICATIONS
z General purpose application and switching application.
ORDERING INFORMATION
Type No.
Marking
MMSTA92
K3R
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-310
V_CEO
V_EBO
Collector-Emitter Voltage
Emitter-Base Voltage
-305
-5
I_C
Collector Current -Continuous
-300
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage
V_(BR)CBO I_C=-100μA,I_E=0
-310
UNIT
V
Collector-emitter breakdown voltage V_(BR)CEO I_C=-1mA,I_B=0
-305
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-200V,I_E=0
-0.25 μA
Emitter cut-off current
DC current gain
I_EBO
V_EB=-5V,I_C=0
V_CE=-10V,I_C=-1mA
60
h_FE
V_CE=-10V,I_C=-10mA
100
V_CE=-10V,I_C=-80mA
60
-0.1 μA
200
Document number: BL/SSSTF058
Rev.A
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