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| MMST5551 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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BL Galaxy Electrical
Production specification
NPN General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMST5401).
z Also available in lead free version.
Pb
Lead-free
MMST5551
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMST5551
K4N
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25â unless otherwise specified
Symbol Parameter
Value
UNIT
VCBO
collector-base voltage
180
V
VCEO
VEBO
IC
PC
Tj ,Tstg
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
160
V
6
V
0.6
A
0.3
W
-55-150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0
180
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0
160
V(BR)EBO Emitter-base breakdown voltage
IE=100μA,IC=0
6
ICBO
collector cut-off current
IE = 0; VCB = 180V
-
0.1 μA
IEBO
hFE
VCE(sat)
VBE(sat)
fT
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
IC = 0; VEB = 4V
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50 mA
IC = 50 mA; IB = 5 mA
IC = 50 mA; IB = 5 mA
IC = 10mA; VCE = 10V;
f = 100MHz
-
0.1 μA
80
-
80 250
30
-
-
0.5 V
-
1V
80
- MHz
Document number: BL/SSSTC056
Rev.A
www.galaxycn.com
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