MMST5401_14 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor

Production specification
PNP General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMST5551).
z Also available in lead free version.
Pb
Lead-free
MMST5401
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMST5401
K4M
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
V_CBO
collector-base voltage
-160
V_CEO
collector-emitter voltage
-150
V_EBO
emitter-base voltage
-5
I_C
collector current (DC)
-0.6
P_C
R_θJA
T_j ,T_stg
Collector dissipation
Thermal resistance junction to ambient
junction and storage temperature
0.2
625
-55 to +150
UNIT
V
V
V
A
W
°C/W
°C
F055
Rev.A
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