MMST2907A_14 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.(P_C=200mW)
Pb
z Epitaxial planar die construction.
Lead-free
z Complementary NPN type MMST2222A.
APPLICATIONS
z General purpose application.
Production specification
MMST2907A
ORDERING INFORMATION
Type No.
Marking
MMST2907A
K3F
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-60
V_CEO
Collector-Emitter Voltage
-60
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-600
P_C
Collector Dissipation
200
R_θJA
Thermal Resistance,Junction to Ambient
625
Units
V
V
V
mA
mW
℃/W
T_j,T_stg
Junction and Storage Temperature
-55 to +150
℃
F050
Rev.A
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