MMST2222A_13 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Epitaxial planar die construction.
z Complements the MMST2907A.
z Ultra-small surface mount package.
Pb
Lead-free
MMST2222A
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
MMST2222A
K3P
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
75
Units
V
V_CEO
Collector-Emitter Voltage
40
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current -Continuous
600
mA
P_C
Collector Dissipation
200
mW
R_θJA
Thermal resistance, junction to ambient
625
℃/W
T_j,T_stg
Junction and Storage Temperature
-55 to +150
℃
F006
Rev.A
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