MMBTH10_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor
FEATURES
z High transition frequency.
z Power dissipation.(P_C=350mW).
Pb
Lead-free
APPLICATIONS
z VHF/UHF Transistor.
Production specification
MMBTH10
ORDERING INFORMATION
Type No.
Marking
MMBTH10
3EM
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
25
V_EBO
Emitter-Base Voltage
3
I_C
Collector Current -Continuous
50
P_C
Collector Dissipation
350
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
C125
Rev.A
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