MMBTH10 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z High transition frequency.
z Power dissipation.(P_C=350mW)
Pb
Lead-free
APPLICATIONS
z VHF/UHF Transistor.
Production specification
MMBTH10
ORDERING INFORMATION
Type No.
Marking
MMBTH10
3EM
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
25
V
V_EBO
Emitter-Base Voltage
3
V
I_C
Collector Current -Continuous
50
mA
P_C
Collector Dissipation
350
mW
T_j,T_stg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _{MAX UNIT}
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
30
V
Collector-emitter breakdown voltage _{V(BR)CEO IC=0.1mA,IB=B 0}
25
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=10μA,I_C=0
3
V
Collector cut-off current
I_CBO
V_CB=25V,I_E=0
0.1 μA
Emitter cut-off current
I_EBO
V_EB=2V,I_C=0
0.1 μA
DC current gain
h_FE
V_CE=10V,I_C=4.0mA
60
Collector-emitter saturation voltage _VCE(sat) I_C=4.0mA, I_B=B 0.4mA
0.5 V
Base-emitter on voltage
Transition frequency
V_BE(on)
f_T
I_C=4.0mA, V_CE=10V
V_CE=10V, I_C= 4.0mA
f=100MHz
0.95 V
650
MHz
Document number: BL/SSSTC125
Rev.A
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