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| MMBTA43_13 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – NPN High Voltage Amplifier | |||
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NPN High Voltage Amplifier
FEATURES
z Epitaxial planar die construction.
z Ideal for medium power amplification
and switching.
Pb
Lead-free
Production specification
MMBTA43
APPLICATIONS
z As a video output to driver color CRT and other high
Voltage application.
ORDERING INFORMATION
Type No.
Marking
MMBTA43
ABX
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Symbol
Parameter
Value
UNIT
VCBO
VCEO
VEBO
IC
PC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
200
V
200
V
6
V
0.2
A
0.35
W
Tj ,Tstg
junction and storage temperature
-55 to +150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO
V(BR)CEO
Collector-base breakdown voltage IC=100μA,IE=0
Collector-emitter breakdown voltage IC=1.0mA,IB=0
200
-V
200
-V
V(BR)EBO Emitter-base breakdown voltage
IE=100μA,IC=0
6
-V
ICBO
collector cut-off current
IE = 0; VCB = 160V
-
0.1 μA
IEBO
hFE
VCE(sat)
VBE(sat)
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
IC = 0; VEB = 4V
VCE =10V; IC=1mA
VCE =10V;IC =10mA
VCE =10V;IC =30mA
IC =20mA; IB =2mA
IC =20mA; IB=2mA
-
0.1 μA
25
-
40
-
50 200
-
0.4 V
-
0.9 V
Cob
Collector output capacitance
VCB=20V,IE=0;f=1.0MHz
4.0 pF
fT
transition frequency
IC=10mA; VCE =20V
f=100MHz
50
- MHz
C122
Rev.A
www.gmicroelec.com
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