 English |
|
|
|
|
|
|
|
| MMBTA42 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistor | |||
| |||
|
BL Galaxy Electrical
NPN High Voltage Amplifier
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
Pb
Lead-free
(MMBTA92).
z Ideal for medium power amplification and switching.
Production specification
MMBTA42
APPLICATIONS
z NPN High voltage amplifier.
ORDERING INFORMATION
Type No.
Marking
MMBTA42
1D
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Symbol
Parameter
Value
UNIT
VCBO
collector-base voltage
300
V
VCEO
collector-emitter voltage
300
V
VEBO
emitter-base voltage
6
V
IC
collector current (DC)
0.2
A
PC
Collector dissipation
0.35
W
Tj ,Tstg
junction and storage temperature
-55-150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0
300
-V
V(BR)CEO Collector-emitter breakdown voltage IC=1.0mA,IB=B 0
300
-V
V(BR)EBO Emitter-base breakdown voltage
IE=100μA,IC=0
6
-V
ICBO
collector cut-off current
IE = 0; VCB = 200V
-
0.1 μA
IEBO
emitter cut-off current
IC = 0; VEB = 6V
-
0.1 μA
hFE
DC current gain
VCE =10V; IC=1mA
VCE =10V;IC =10mA
VCE =10V;IC =30mA
25
-
40
-
40
-
VCE(sat)
collector-emitter saturation voltage IC =20mA; IBB =2mA
-
0.5 V
VBE(sat)
base-emitter saturation voltage
IC =20mA; IB=B 2mA
-
0.9 V
Cob
Collector output capacitance
VCB=20V,IE=0;f=1.0MHz
3.0 pF
fT
transition frequency
IC=10mA; VCE =20V
f=100MHz
50
- MHz
Document number: BL/SSSTC076
Rev.A
www.galaxycn.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese