MMBTA05_14 Datasheet, PDF (1/5 Pages) Galaxy Semi-Conductor Holdings Limited – NPN General Purpose Transistor

Production specification
NPN General Purpose Transistor
FEATURES
z High breakdown voltage.
z Complementary PNP type available
Pb
Lead-free
(MMBTA55/MMBTA56).
z Low collector-emitter saturation voltage.
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBTA05
MMBTA06
1H
1GM
MMBTA05/MMBTA06
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
V_CBO
V_CEO
collector-base voltage
collector-emitter voltage
MMBTA05
MMBTA06
MMBTA05
MMBTA06
V_EBO
emitter-base voltage
I_C
collector current (DC)
P_C
Collector dissipation
R_θJA
Thermal Resistance, Junction to Ambient
T_j ,T_stg
junction and storage temperature
Value
60
80
60
80
4
0.5
350
357
-55 to +150
UNIT
V
V
V
A
mW
°C/W
°C
C119
Rev.B
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