MMBT5551_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN General Purpose Transistor

Production specification
NPN General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT5401).
z Also available in lead free version.
Pb
Lead-free
MMBT5551
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBT5551
G1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
V_CBO
collector-base voltage
180
V_CEO
collector-emitter voltage
160
V_EBO
emitter-base voltage
6
I_C
collector current (DC)
0.6
P_C
Collector dissipation
0.35
R_θJA
Thermal resistance,Junction to ambient
357
T_j ,T_stg
junction and storage temperature
-55 to +150
UNIT
V
V
V
A
W
°C/W
°C
C065
Rev.A
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