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| MMBT5551 Datasheet, PDF (1/3 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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BL Galaxy Electrical
Production specification
NPN General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBT5401).
z Also available in lead free version.
Pb
Lead-free
MMBT5551
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No.
Marking
MMBT5551
G1
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Symbol Parameter
Value
UNIT
VCBO
collector-base voltage
180
V
VCEO
collector-emitter voltage
160
V
VEBO
emitter-base voltage
6
V
IC
collector current (DC)
0.6
A
PC
Collector dissipation
0.3
W
Tj ,Tstg
junction and storage temperature
-55-150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0
180
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=B 0
160
V(BR)EBO Emitter-base breakdown voltage
IE=100μA,IC=0
6
ICBO
collector cut-off current
IE = 0; VCB = 180V
-
0.1 μA
IEBO
emitter cut-off current
IC = 0; VEB = 4V
-
0.1 μA
hFE
DC current gain
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50 mA
80
-
80 250
30
-
VCE(sat)
collector-emitter saturation voltage IC = 50 mA; IBB = 5 mA
-
0.5 V
VBE(sat)
base-emitter saturation voltage
IC = 50 mA; IBB = 5 mA
-
1V
fT
transition frequency
IC = 10mA; VCE = 10V;
80
f = 100MHz
- MHz
Document number: BL/SSSTC065
Rev.A
www.galaxycn.com
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