 English |
|
|
|
|
|
|
|
| MMBT5401 Datasheet, PDF (1/3 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
| |||
|
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBT5551).
z Also available in lead free version.
Pb
Lead-free
MMBT5401
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No.
Marking
MMBT5401
2L
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Symbol Parameter
Value
UNIT
VCBO
collector-base voltage
-160
V
VCEO
collector-emitter voltage
-150
V
VEBO
emitter-base voltage
-5
V
IC
collector current (DC)
-0.6
A
PC
Collector dissipation
0.3
W
Tj ,Tstg
junction and storage temperature
-55-150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0
-160
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=B 0
-150
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA,IC=0
-5
ICBO
collector cut-off current
IE = 0; VCB = -120V
-
-0.1 μA
IEBO
emitter cut-off current
IC = 0; VEB = -4V
-
-0.1 μA
hFE
DC current gain
VCE = -5V; IC= -1mA
VCE = -5V;IC = -10mA
VCE = -5V;IC = -50 mA
50
-
60 250
50
-
VCE(sat)
collector-emitter saturation voltage IC = -50 mA; IBB = -5 mA
-
-0.5 V
VBE(sat)
base-emitter saturation voltage
IC = -50 mA; IBB = -5 mA
-
-1 V
fT
transition frequency
IC = -10mA; VCE = -5V;
100
f = 30MHz
- MHz
Document number: BL/SSSTC075
Rev.A
www.galaxycn.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese