MMBT3906_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor

PNP General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
Pb
Lead-free
(MMBT3904).
z Collector Current Capability I_CM =-200mA.
z Low Voltage(Max:-40V).
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBT3906
2A
Production specification
MMBT3906
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current (DC)
I_CM
peak collector current
I_BM
peak base current
P_tot
total power dissipation
T_stg
storage temperature
Tamb≤25°C
T_j
junction temperature
T_amb
operating ambient temperature
Note Transistor mounted on an FR4 printed-circuit board.
Value
UNIT
-40
V
-40
V
-6
V
-100
mA
-200
mA
-100
mA
250
mW
-65 to +150 °C
150
°C
-65 to +150 °C
C062
Rev.A
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