MMBT3906T Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Production specification
PNP General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBT3904T).
z Low Current (Max:-200mA).
z Low Voltage(Max:-40V).
Pb
Lead-free
MMBT3906T
APPLICATIONS
z Ideal for medium power amplification and switching.
ORDERING INFORMATION
Type No.
Marking
MMBT3906T
3N
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
MMBT3906T
V_CBO
collector-base voltage
-40
V_CEO
collector-emitter voltage
-40
V_EBO
I_C
emitter-base voltage
collector current (DC)
-5
-200
P_d
Power dissipation
150
R_θJA
Thermal resistance, junction to Ambient
833
T_stg
storage temperature range
-55 to +150
T_j
junction temperature
150
UNIT
V
V
V
mA
mW
°C/W
°C
°C
H015
Rev.A
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