MMBT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

BL Galaxy Electrical
PNP General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
(MMBT3904).
z Low Current (Max:-100mA).
z Low Voltage(Max:-40v).
Pb
Lead-free
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No.
Marking
MMBT3906
2A
Production specification
MMBT3906
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current (DC)
I_CM
peak collector current
I_BM
peak base current
P_tot
total power dissipation
T_stg
storage temperature
Tamb≤25°C
T_j
junction temperature
T_amb
operating ambient temperature
Note Transistor mounted on an FR4 printed-circuit board.
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-40
-40
-6
-100
-200
-100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
Document number: BL/SSSTC062
Rev.A
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