MMBT3904_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN SWITCHING TRANSISTOR

Production specification
NPN SWITCHING TRANSISTOR
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
Pb
Lead-free
(MMBT3906).
z Collector Current Capability I_CM =200mA.
z Collector-emitter Voltage V_CEO=40V.
MMBT3904
APPLICATIONS
z General switching and amplification
ORDERING INFORMATION
Type No.
Marking
MMBT3904
1AM
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Value
UNIT
V_CBO
collector-base voltage
open emitter
60
V
V_CEO
collector-emitter voltage
open base
40
V
V_EBO
I_C
emitter-base voltage
collector current (DC)
open collector
6
V
100
mA
I_CM
peak collector current
200
mA
I_BM
peak base current
100
mA
P_tot
total power dissipation
Tamb≤25°C
250
mW
T_stg
storage temperature
-65 to +150 °C
T_j
junction temperature
150
°C
T_amb
operating ambient temperature
-65 to +150 °C
C061
Rev.A
www.gmicroelec.com
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