MMBT2369 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Surface Mount Si-Epi-Planar Switching Transistors

BL Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction.
z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT2369
APPLICATIONS
z Use as a medium power amplifier.
ORDERING INFORMATION
Type No.
Marking
MMBT2369
M1J
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
15
V
V_EBO
Emitter-Base Voltage
4.5
V
I_C
Collector Current -Continuous
200
mA
P_C
Collector Dissipation
300
mW
T_j,T_stg
Junction and Storage Temperature
-55to+150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-base breakdown voltage
V_(BR)CBO I_C=10μA I_E=0
40
V
Collector-emitter breakdown voltage V_(BR)CEO I_C=10mA I_B=B 0
15
V
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
V_(BR)EBO
I_CBO
h_FE
V_CE(sat)
I_E=10μA I_C=0
V_CB=20V I_E=0
V_CE=1.0V I_C=10mA
V_CE=2.0V I_C=100mA
I_C=10mA I_B=B 1.0mA
4.5
V
0.4 μA
40 120
20
0.25 V
Output capacitance
C_obo
V_CE=5.0V,I_E=0,f=1.0MHz
4.0 pF
Document number: BL/SSSTC114
Rev.A
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