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| MMBD452 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY DIODE | |||
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Production specification
Dual Hot-Carrier Diodes
FEATURES
z Very low capacitance.
Pb
z Extremely low minority carrier lifetime. Lead-free
z Low reverse leakage.
z Power dissipation Pd=225mW.
MMBD452
APPLICATIONS
z Designed primarily for UHF and VHF detector
applications.
ORDERING INFORMATION
Type No.
Marking
MMBD452
5N
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25â unless otherwise specified
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
VR
30
V
Power Dissipation
Pd
225
mW
Operating junction temperature range
TJ
-55 to +125
â
Junction and storage temperature
TSTG
-55 to +150
â
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Symbol Min.
V(BR)
30
VF
Typ.
0.38
0.52
Max.
0.45
0.6
IR
13 200
Unit Conditions
V IR=10μA
V
IF=1.0mA
IF=10mA
nA VR=25V
Total Capacitanc
CT
0.9 1.5
pF VR=15V,f=1MHz
C139
Rev.A
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