MMBD352W Datasheet, PDF (1/3 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Schottky Barrier Diodes

Production specification
Schottky Barrier Diode
FEATURES
z Very low capacitance-less than 1.0Pf
@zero volts.
Pb
Lead-free
z Low forward voltage-0.5 Voltage(Typ.)
@I_F=10mA.
MMBD352W
APPLICATIONS
z For UHF mixer applications.
ORDERING INFORMATION
Type No.
Marking
MMBD352W
M5
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
V_R
Power Dissipation
P_d
Thermal resistance junction-to-ambient _RθJA
Junction temperature
T_j
Storage temperature range
T_stg
7.0
V
200
mW
625
150
℃
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse current
Forward voltage
Symbol
I_R
V_F
Test conditions
V_R=3V
V_R=7V
I_F=10mA
MIN Typ. MAX UNIT
0.25
μA
10
0.60
V
Diode capacitance
C_D
V_R=0V, f=1MHz
1.0
pF
F070
Rev.A
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