MBRF830 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC ITO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight:0.064 ounces,1.81 gram
MBRF830 - - - MBRF8100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 8.0 A
ITO-220AC
0.405(10.27)
0.383(9.72)
PIN
1
2
0.191(4.85)
0.171(4.35)
0.060(1.52)
0.140(3.56) _DIA
0.130(3.30)
0.350(8.89)
0.330(8.38)
0.188(4.77)
0.172(4.36)
0.110(2.80)
0.100(2.54)
0.131(3.39)
0.122(3.08) ^DIA
0.110(2.80)
0.100(2.54)
0.105(2.67)
0.095(2.41)
0.037(0.94)
0.027(0.69)
PIN1
0.205(5.20)
0.195(4.95)
PIN2
Dimensions in inches and(millimeters)
0.022(0.55)
0.014(0.36)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF _UNITS
830 835 840 845 850 860 880 8100
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
V_RRM 30
35
40 45 50
60 80 100
V
V_RMS 21
25
28 32 35
42 56 70
V
V_DC
30
35
40 45 50
60 80 100
V
Maximum average forw ard total device11111111
m rectif ied current @T_C = 125°C
I_F(AV)
8.0
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
150
A
Maximum forw ard
(I_F=8.0A ,TC=125 ⁾
v oltage
(Note 1)
(I_F=8.0A,T_C=25 )
V_F
(IF=16A ,TC=25 )
0.57
0.70
0.84
0.70
0.80
0.95
-
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
I_R
R_{θJ C}
T_J
T_STG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
0.5
mA
50
K/W
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Document Number 0267030
BLGALAXY ELECTRICAL
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