MBR830 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 8.0A SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.064 ounces,1.81 gram
MBR830 - - - MBR8100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 8.0 A
TO-220AC
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
V_RRM
V _{R MS}
Maximum DC blocking voltage
V_DC
Maximum average forw ard total device11111111
m rectif ied current @T_C = 125°C
I_F(AV)
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
MBR
830
30
21
30
MBR MBR MBR MBR MBR MBR MBR _UNITS
835 840 845 850 860 880 8100
35
40 45 50
60 80 100
V
25
28 32 35
42 56 70
V
35
40 45 50
60 80 100
V
8.0
A
150
A
Maximum forw ard
(I_F=8.0A ,TC=125 ⁾
v oltage
(Note 1)
(I _F=8.0A,T_C=25 )
V_F
(IF=16A ,TC=25 )
0.57
0.70
0.84
0.70
0.80
0.95
-
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
I_R
R_{θJ C}
T_J
T_STG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
0.5
mA
50
K/W
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Document Number 0266039
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1.