MB4F_15 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Production specification
SILICON BRIDGE RECTIFIERS
MB4F--MB10F
FEATURES
z Glass：passivated chip junctions
Pb
z High surge overload rating: 30A peak
Lead-free
z Saves space on printed circuit boards
z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
z Case: Molded plastic body over passivated junctions
z Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
MB4F
MB6F
MB8F
Peak Repetitive Reverse Voltage
V_RRM
400
RMS Reverse Voltage
V_RMS
280
DC Blocking Voltage
V_DC
400
Maximum average forward Output current
@T_A=25℃
I_F(AV)
Peak forward surge current
8.3ms single half-sine-wave
I_FSM
superimposed on rated load
600
800
420
560
600
800
0.8
30
Thermal Characteristics
Characteristic
Typical junction capacitance per leg (NOTE 1)
Operating junction temperature range
Storage temperature range
Symbol
C_J
T_J
T_STG
MB4F
MB6F
MB8F
8
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
MB4F
MB6F
MB8F
Maximum instantaneous forward voltage
V_F
1.0
at 0.4 A
Maximum reverse current @T_A=25℃
5.0
I_R
at rated DC blocking voltage @T_A=100℃
0.1
NOTES: (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
MB10F
1000
700
1000
UNITS
V
V
V
A
A
MB10F
UNITS
pF
℃
℃
MB10F
UNITS
V
μA
mA
Document Number: MBF701AA
www.gmicroelec.com
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