M8050 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR （ NPN ）

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High Collector Current.(I_C= 800mA).
z Complementary To M8550.
Pb
Lead-free
z Excellent HFE Linearity.
z High total power dissipation.(P_C=200mW).
M8050
APPLICATIONS
z High Collector Current..
ORDERING INFORMATION
Type No.
Marking
M8050
Y11
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
25
Units
V
V
V_EBO
Emitter-Base Voltage
6
V
I_C
P_C
T_j,T_stg
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
800
mA
200
mW
-55 to +150
℃
C152
Rev.A
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