M28S_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor
FEATURES
z Excellent H_FE Linearity.
z High DC current gain.
z High Power Dissipation.
APPLICATIONS
z Audio output driver amplifier.
z General purpose switch.
Pb
Lead-free
ORDERING INFORMATION
Type No.
Marking
M28S
28S
Production specification
M28S
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
20
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current -Continuous
1
I_B
Base current
0.4
P_C
Collector Power Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
A
mW
℃
C058
Rev.A
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