LL5711 Datasheet, PDF (1/2 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

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SMALL SIGNAL SCHOTTKY DIODES
LL5711
VOLTAGE RANGE: 70V
POWER DISSIPATION: 400 mW
FEATURES
For general purpos e applications
Metal s ilicon s chottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fas t s witching m ake it ideal for protection of
MOS devices ,s teering,bias ing and coupling diodes for
fas t s witching and low logic level applications
MINI-MELF
Cathode indification
MECHANICAL DATA
Cas e:JEDEC MINI-MELF,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.031 grams
3.4 +0.3
-0.1
0.4± 0.1
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
V_RRM
Pow er dissipation (Inf inite Heat Sink)
P_tot
Maximum single cycle surge 10 s square w ave
I_{F SM}
Junction tenperature
T_J
Storage temperature range
T_STG
1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature
Value
70.0
400¹⁾
2.0
125
c-55 ---+ 150
UNITS
V
zm W
A
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage
@ I_R=10 A
Leakage current
@ V_R=50V
Forw ard voltage drop @ I_F=1mA
I_F=15mA
Junction capacitance @ V _R=0V ,f=1MHz
Reverse recovery time @ I_F=I_R=5mA ,recover to 0.1 I_R
Termal resistance junction to ambient air
V_R
I_R
V_F
C_J
t_rr
R_θJA
Min.
70.0
Typ.
Max.
UNITS
V
2 0 0 .0
anA
0.41
V
1.0
2
pF
1
ns
0.3
/m W
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Document Number 0265030
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