KTD1898 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

Production specification
Power Transistor
FEATURES
z High V_CEO,V_CEO=80V.
z High I_C,I_C=1A(DC)_.
z Good H_FE Linearity.
z Low V_CE(sat).
z Complement the 2SB1260.
Pb
Lead-free
KTD1898
APPLICATIONS
z NPN silicon transistor.
ORDERING INFORMATION
Type No.
Marking
KTD1898
DF
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
100
V
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
I_C
Collector Current -pulse
P_C
Collector Dissipation
T_j,T_stg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm²*0.8t)
80
V
5
V
1
A
2
A
0.5
W
1
W
-55 to +150
℃
E153
Rev.A
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