KTC4379 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
Pb
z High speed switching time.
Lead-free
z Low saturation voltage:V_CE(sat)=0.5V(Max).
z P_C=1~2W(Mounted on ceramic substrate).
z Small flat package.
z Complementary: KTA1666.
KTC4379
APPLICATIONS
z Power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTC4379
UO/UY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
50
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
2
I_B
Base Current
0.4
P_C
Collector Dissipation
500
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
A
mW
℃
E002
Rev.A
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