KTC4377 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (STROBO FLASH, HIGH CURRENT)

Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High DC Current Gain and Excellent h_FE Linearity
: h_FE(1)=140 600(V_CE=1V, I_C=0.5A)
Pb
Lead-free
: h_FE(2)=70(Min.), 140(Typ.) (V_CE=1V, I_C=2A).
z Low saturation voltage:V_CE(sat)=0.5V(Max). (I_C=2A, I_B=50mA).
z Small flat package.
KTC4377
APPLICATIONS
z Power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTC4377
SA/SB/SC/SD
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEO
Collector-Emitter Voltage
10
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current -Continuous
2
I_B
Base Current
0.4
P_C
Collector Dissipation
500
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
A
mW
℃
E124
Rev.A
www.gmicroelec.com
1