KTC3879 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF VHF BAND AMPLIFIER)

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High power gain.
Pb
Lead-free
KTC3879
APPLICATIONS
z High frequency application.
z HF,VHF band amplifier appilication.
ORDERING INFORMATION
Type No.
Marking
KTC3879
RR/RO/RY
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
35
V_CEO
Collector-Emitter Voltage
30
V_EBO
Emitter-Base Voltage
4
I_C
Collector Current
50
I_E
Emitter Current
-50
P_C
Collector Power Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mA
mW
℃
Document number: BL/SSSTC110
Rev.A
www.galaxycn.com
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