KTC3265_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain: h_FE:100-320.
z Low saturation voltage.
Pb
Lead-free
z Suitable for driver stage of small motor.
z Complementary to KTA1298.
z Small package.
KTC3265
APPLICATIONS
z Low frequency power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTC3265
EO/EY
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
35
V_CEO
Collector-Emitter Voltage
30
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
800
I_B
Base Current
160
P_C
Collector Power Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
℃
C109
Rev.B
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