KTA1666 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
Pb
z High speed switching time.
Lead-free
z Low saturation voltage:V_CE(sat)=-0.5V(Max)
z P_C=1~2W(Mounted on ceramic substrate)
z Small flat package.
z Complementary: KTC4379.
KTA1666
APPLICATIONS
z Power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTA1666
WO/WY
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
-50
-50
-5
-2
-0.4
500
150
-55 to +150
Units
V
V
V
A
A
mW
℃
℃
E001
Rev.A
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