KTA1298_13 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain:h_FE=100-320.
z Low saturation voltage:V_CE(sat)=-0.4V(Max)
(I_C=-500mA,I_B=-20mA).
z Suitable for driver stage of small motor.
z Complementary to KTC3265.
z Small package.
Pb
Lead-free
APPLICATIONS
z Low frequency power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTA1298
IO/IY
KTA1298
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-35
V_CEO
Collector-Emitter Voltage
-30
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-800
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
C095
Rev.B
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