KBJ8A_12 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Bridge Rectifiers

Production specification
Silicon Bridge Rectifiers
KBJ8A--KBJ8M
FEATURES
 Rating to 1000V PRV
 Surge overload rating to 200 Amperes peak
 Ideal for printed circuit board
 Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
 Lead solderable per MIL-STD-202 method 208
 Glass passivated chip junctions
MECHANCAL DATA
 Polarity: Symbols molded on body
 Weight: 0.23 ounces,6.6 grams
 Mounting position: Any
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ8A KBJ8B KBJ8D
Maximum recurrent peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward Output current
@TA=100℃
IF(AV)
Peak forward surge current
8.3ms single half-sine-wave
IFSM
superimposed on rated load
100
200
70
140
100
200
Thermal Characteristics
KBJ8G
400
280
400
8.0
200
Pb
Lead-free
KBJ8J
600
420
600
KBJ8K
800
560
800
KBJ8M
1000
700
1000
UNITS
V
V
V
A
A
Characteristic
Symbol KBJ8A KBJ8B KBJ8D KBJ8G KBJ8J
Typical junction capacitance per element
CJ
Typical thermal resistance
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
55
1.6
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
KBJ8K
KBJ8M
UNITS
pF
℃/W
℃
℃
Characteristic
Symbol KBJ8A
Maximum instantaneous forward voltage
VF
@4.0A
Maximum reverse current @TA=25 ℃
IR
at rated DC blocking voltage @TA=100℃
KBJ8B
KBJ8D
KBJ8G
1.0
10.0
1.0
KBJ8J
KBJ8K
KBJ8M
UNITS
V
μA
mA
Document Number:KJ6812AA
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