KBJ25A_12 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Bridge Rectifiers

Production specification
Silicon Bridge Rectifiers
KBJ25A--KBJ25M
FEATURES
 Rating to 1000V PRV
 Surge overload rating to 200 Amperes peak
 Ideal for printed circuit board
Pb
Lead-free
 Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
 Lead solderable per MIL-STD-202 method 208
MECHANCAL DATA
 Polarity: Symbols molded on body
 Weight: 0.23 ounces,6.6 grams
 Mounting position: Any
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ25A KBJ25B KBJ25D KBJ25G KBJ25J KBJ25K KBJ25M UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward Output current
IF(AV)
25.0
A
@TA=25℃
Peak forward surge current
8.3ms single half-sine-wave
IFSM
200.0
A
superimposed on rated load
Thermal Characteristics
Characteristic
Symbol KBJ25A KBJ25B KBJ25D KBJ25G KBJ25J KBJ25K KBJ25M UNITS
Typical junction capacitance per element
CJ
Typical thermal resistance
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
85
0.6
- 55 ---- + 150
- 55 ---- + 150
pF
℃/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol KBJ25A KBJ25B KBJ25D KBJ25G KBJ25J KBJ25K KBJ25M UNITS
Maximum instantaneous forward voltage
VF
@12.5A
Maximum reverse current @TA=25 ℃
IR
at rated DC blocking voltage @TA=100℃
1.1
V
10.0
μA
1.0
mA
Document Number: KJ6803AA
www.gmicroelec.com
1