HM879 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – SILICON NPN EPITAXIAL TYPE TRANSISTOR

Production specification
SILICON PNP EPITAXIAL TYPE TRANSISTOR
FEATURES
z Charger-up time is about 1 mS faster
Than of a germanium transistor.
Pb
Lead-free
z Small saturation voltage can bring dissipation
And flasing times.
HM879
ORDERING INFORMATION
Type No.
Marking
HM879
879
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
30
V_CEX
Collector-Emitter Voltage
20
V_CEO
Collector-Emitter Voltage
10
V_EBO
Emitter-Base Voltage
6
I_C
P_C
T_j,T_stg
Collector Current –Continuous
–Pluse
Collector Dissipation
Junction and Storage Temperature
3
5
1
-55 to +150
Units
V
V
V
V
A
W
℃
E079
Rev.A
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