GBU8A_14 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Bridge Rectifiers

Production specification
Silicon Bridge Rectifiers
FEATURES
z Rating to 1000V PRV
z Surge overload rating to 200 Amperes peak
z Ideal for printed circuit board
z Reliable low cost construction utilizing molded
z plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
z Glass passivated junctions
GBU8A--GBU8M
Pb
Lead-free
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward Output
current @T_C=100℃
Peak forward surge current
8.3ms single half-sine-wav
superimposed on rated load
V_RRM
50
100
200
400
600
800
1000
V
V_RMS
35
70
140
280
420
560
700
V
V_DC
50
100
200
400
600
800
1000
V
I_F(AV)
8.0
A
I_FSM
200
A
Thermal Characteristics
Characteristic
Operating junction temperature range
Storage temperature range
Symbol
T_J
T_STG
GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M
- 55 ---- + 150
- 55 ---- + 150
UNITS
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNITS
Maximum instantaneous forward voltage @4.0A
V_F
Maximum reverse current @T_A=25℃
I_R
at rated DC blocking voltage @T_A=125℃
1.0
V
5.0
μA
0.5
mA
Document Number:GBU802AA
www.gmicroelec.com
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