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GBU4A_13 Datasheet, PDF (1/3 Pages) Diotec Semiconductor – Silicon-Bridge-Rectifiers
Production specification
Silicon Bridge Rectifiers
FEATURES
z Ideal for printed circuit board
z Reliable low cost construction utilizing molded plastic technique
z Plastic materrial has U/L flammability classification 94V-O
z Mounting position: Any
z Glass passivated chip junctions
GBU4A--GBU4M
Pb
Lead-free
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Maximum average forward Output current
@TC=100℃ (note1)
IF(AV)
4.0
Peak forward surge current
8.3ms single half-sine-wave
IFSM
superimposed on rated load
150.0
UNITS
V
V
V
A
A
Thermal Characteristics
Characteristic
Typical junction capacitance perelement
(note 3)
Typical thermal resistance (note2)
(note1)
Operating junction temperature range
Storage temperature range
Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M
CJ
RθJA
RθJC
TJ
TSTG
100
45
22.0
4.2
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
UNITS
pF
℃/W
℃
℃
Characteristic
Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M
Maximum instantaneous forward voltage
VF
1.0
@2.0A
Maximum reverse current @TA=25 ℃
5.0
at rated DC blocking voltage @TA=125℃
IR
50
NOTE: 1. Unit case mounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm) AI. Plate.
2. Units mounted on P.C.B. with 0.5x0.5" (12x12mm) copper pads and 0.375" (9.5mm) lead length.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.
UNITS
V
μA
Document Number:GBU801AA
www.gmicroelec.com
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