English
Language : 

GBU25A_14 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Bridge Rectifiers
Production specification
Silicon Bridge Rectifiers
GBU25A--GBU25M
FEATURES
z Ideal for printed circuit board
z Reliable low cost construction utilizing molded plastic technique
z Plastic materrial has U/L flammability classification 94V-O
z Mounting position: Any
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol GBU25A GBU25B GBU25D
GBU25G
GBU25J
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
Maximum RMS voltage
VRMS
35
70
140
280
420
Maximum DC blocking voltage
VDC
50
100
200
400
600
GBU25K GBU25M
800
1000
560
700
800
1000
UNITS
V
V
V
Maximum average forward Output current
IF(AV)
25
A
@TC=100℃
Peak forward surge current
8.3ms single half-sine-wav
IFSM
350
A
superimposed on rated load
Thermal Characteristics
Characteristic
Symbol
Typical junction capacitance per leg (note 3)
CJ
Typical thermal resistance per leg (note 2)
RθJA
(note 1)
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
GBU25A GBU25B GBU25D GBU25G GBU25J
211
21
2.2
- 55 ---- + 150
- 55 ---- + 150
GBU25K GBU25M
94
UNITS
pF
℃/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol GBU25A GBU25B GBU25D GBU25G GBU25J GBU25K GBU25M
Maximum instantaneous forward voltage
VF
1.1
@12.5A
Maximum reverse current @TA=25 ℃
5.0
IR
at rated DC blocking voltage @TA=125℃
500
NOTE: 1. Unit case mounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm) AI. Plate
2. Units mounted in free air, no heat sink on P.C.B., 0.5x0.5"(12x12mm) copper pads, 0.375"(9.5mm) lead length.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.
UNITS
V
μA
Document Number:GBU804AA
www.gmicroelec.com
1