GBU10A_12 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Bridge Rectifiers

Production specification
Silicon Bridge Rectifiers
GBU10A--GBU10M
FEATURES
 Ideal for printed circuit board
 Reliable low cost construction utilizing molded plastic technique
 Plastic materrial has U/L flammability classification 94V-O
 Mounting position: Any
 Glass passivated chip junctions
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol GBU10A GBU10B GBU10D
Maximum recurrent peak reverse voltage
VRRM
50
100
200
Maximum RMS voltage
VRMS
35
70
140
Maximum DC blocking voltage
VDC
50
100
200
GBU10G
400
280
400
GBU10J
600
420
600
GBU10K GBU10M
800
1000
560
700
800
1000
UNITS
V
V
V
Maximum average forward Output current
IF(AV)
10.0
A
@TC=100℃
Peak forward surge current
8.3ms single half-sine-wave
IFSM
200
A
superimposed on rated load
Thermal Characteristics
Characteristic
Typical junction capacitance per leg (note 3)
Typical thermal resistance per leg (note 2)
(note 1)
Operating junction temperature range
Storage temperature range
Symbol
CJ
RθJA
RθJC
TJ
TSTG
GBU10A
GBU10B GBU10D GBU10G GBU10J
211
21
2.2
- 55 ---- + 150
- 55 ---- + 150
GBU10K
94
GBU10M
UNITS
pF
℃/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage
VF
@5.0A
Maximum reverse current @TA=25 ℃
IR
at rated DC blocking voltage @TA=125℃
GBU10A GBU10B GBU10D GBU10G GBU10J GBU10K GBU10M
1.1
5.0
500
NOTE: 1. Unit case mounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm) AI. Plate
2. Units mounted in free air, no heat sink on P.C.B., 0.5x0.5"(12x12mm) copper pads, 0.375"(9.5mm) lead length.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.
UNITS
V
μA
Document Number:GBU803AA
www.gmicroelec.com
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