GBS6A Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Bridge Rectifiers

Production specification
Silicon Bridge Rectifiers
GBS6A--GBS6M
FEATURES
z Rating to 1000V PRV
z Surge overload rating to 140 Amperes peak
z Reliable low cost construction utilizing molded
Pb
Lead-free
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
GBS GBS
Symbol
6A 6B
Maximum recurrent peak reverse voltage
V_RRM
50 100
GBS
6D
200
GBS
6G
400
GBS
6J
600
GBS
6K
800
GBS
6M
1000
UNITS
V
Maximum RMS voltage
V_RMS
35
70 140 280 420 560 700
V
Maximum DC blocking voltage
V_DC
50 100 200 400 600 800 1000
V
50Hz sine wave, R-load Without heat sink Ta=25℃
2.3
50Hz sine wave, R-load With heat sink Tc=50℃
I_F(AV)
6.0
A
Peak forward surge current
8.3ms single half-sine-wave
I_FSM
140
A
superimposed on rated load
Thermal Characteristics
Characteristic
Rating for fusing (t < 8.3 ms)
Typical junction capacitance per diode
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Symbol
I2t
CJ
RθJA
RθJC
T_J
T_STG
GBS
6A
GBS GBS GBS GBS
6B 6D 6G 6J
82
95
22
3.5
- 55 ---- + 150
- 55 ---- + 150
GBS
6K
40
GBS
6M
UNITS
A2s
pF
°C/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Value
Maximum instantaneous forward voltage @3.0A
V_F
1.05
Maximum reverse current
@T_A=25 ℃
5.0
at rated DC blocking voltage
@T_A=100℃
I_R
500
UNITS
V
μA
Document Number:GBS802AA
www.gmicroelec.com
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