GBS4A Datasheet, PDF (1/3 Pages) Diotec Semiconductor – Silicon-Bridge Rectifiers

Production specification
Silicon Bridge Rectifiers
FEATURES
z Rating to 1000V PRV
z Surge overload rating to 120 Amperes peak
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
GBS4A--GBS4M
Pb
Lead-free
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
GBS GBS
Symbol
4A 4B
Maximum recurrent peak reverse voltage
V_RRM
50 100
GBS
4D
200
GBS
4G
400
GBS
4J
600
GBS
4K
800
GBS
4M
1000
UNITS
V
Maximum RMS voltage
V_RMS
35
70 140 280 420 560 700
V
Maximum DC blocking voltage
V_DC
50 100 200 400 600 800 1000
V
50Hz sine wave, R-load Without heat sink Ta=25℃
1.5
50Hz sine wave, R-load With heat sink Tc=50℃
I_F(AV)
4.0
A
Peak forward surge current
8.3ms single half-sine-wave
I_FSM
120
A
superimposed on rated load
Thermal Characteristics
Characteristic
Operating junction temperature range
Storage temperature range
Symbol
T_J
T_STG
Value
- 55 ---- + 150
- 55 ---- + 150
UNITS
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
Maximum instantaneous forward voltage @2.0A
V_F
Maximum reverse current @T_A=25 ℃
at rated DC blocking voltage @T_A=100℃
I_R
Value
1.05
5.0
500
UNITS
V
μA
Document Number:GBS801AA
www.gmicroelec.com
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