GAG01Y Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIERS

BL ^{GALAXY ELECTRICAL}
HIGH EFFICIENCY RECTIFIERS
GAG01Y - - - GAG01A
VOLTAGE RANGE: 70--- 600 V
CURRENT: 0.5---1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Eas ily cleaned with freon, alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC R-1, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.007ounces,0.20 grams
Mounting: Any
R-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Device marking code
GAG01Y GAG01Z GAG01
AG01Y AG01Z AG01
Maximum peak repetitive reverse voltage
V_RRM
70
200
400
Maximum RMS voltage
V_RMS
49
140
280
Maximum DC blocking voltage
V_DC
70
200
400
Maximum average forw ard rectified current
v 9.5mm lead length, @T_A=75
Peak forw ard surge current
I_F(AV)
1.0
0.7
10ms single half-sine-w ave
I_FSM
25
superimposed on rated load
@T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current @T_A=25
at rated DC blocking voltage @T_A=100
V_F
1.2
I_R
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJC
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to case.
15
1.8
100
500
50
20
22
- 55 ----- + 150
- 55 ----- + 150
GAG01A _UNITS
AG01A
600
420
V
600
0.5
A
A
V
XA
ns
15
pF
/W
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Document Number 0262023
BLGALAXY ELECTRICAL
1.