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FDB101_15 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – RECOVERY BRIDGE RECTIFIER
Production specification
RECOVERY BRIDGE RECTIFIER
FDB101--FDB107
FEATURES
z Rating to 1000V PRVP
z Surge overload rating to 30 Amperes peak
Pb
Lead-free
z Ideal for printed circuit board
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
z Lead: silver plated copper, solderde plated
z Plastic material has UL flammability classification94V-O
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol FDB101 FDB102 FDB103 FDB104 FDB105 FDB106 FDB107 UNITS
Peak Repetitive Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VRMS
35
75
140
280
420
560
700
V
DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward Output current
IF(AV)
1.0
A
@TA=25℃
Peak forward surge current
8.3ms single half-sine-wave
IFSM
30
A
superimposed on rated load
Thermal Characteristics
Characteristic
Symbol FDB101 FDB102 FDB103 FDB104 FDB105 FDB106 FDB107 UNITS
Operating junction temperature range
TJ
- 55 ---- + 150
℃
Storage temperature range
TSTG
- 55 ---- + 150
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol FDB101 FDB102 FDB103 FDB104 FDB105 FDB106 FDB107 UNITS
Maximum instantaneous forward voltage
VF
at 1.0 A
Maximum reverse current @TA=25℃
IR
at rated DC blocking voltage @TA=100℃
Maximum reverse recovery time (Note1)
t rr
NOTE:1. Measured with IF=0.5A,IR=1A, Irr=0.25A.
1.3
V
10
μA
1.0
mA
150
250
500
ns
Document Number:DFM707AA
www.gmicroelec.com
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