EDB101S_15 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Production specification
SILICON BRIDGE RECTIFIERS
EDB101S--EDB106S
SFEATURES
z Rating to 1000V PRVP
z Surge overload rating to 30 Amperes peak
z Ideal for printed circuit board
Pb
Lead-free
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
z Glass passivated chip junctions
z Plastic material has UL flammability classification94V-O
z Polarity symbols molded on body
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S
Peak Repetitive Reverse Voltage
V_RRM
50
RMS Reverse Voltage
V_RMS
35
DC Blocking Voltage
V_DC
50
Maximum average forward Output current
@T_A=55℃
I_F(AV)
Peak forward surge current
8.3ms single half-sine-wave
I_FSM
superimposed on rated load
100
150
200
300
400
70
105
140
210
280
100
150
200
300
400
1.0
30
Thermal Characteristics
UNITS
V
V
V
A
A
Characteristic
Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S
Typical junction calacitance (NOTE 2)
C_J
Operating junction temperature range
T_J
Storage temperature range
T_STG
15
10
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics (@TA = 25°C unless otherwise specified)
UNITS
pF
℃
℃
Characteristic
Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S
Maximum instantaneous forward voltage at
V_F
1.0
1.0 A
Maximum reverse current @T_A=25℃
10.0
I_R
at rated DC blocking voltage @T_A=100℃
1.0
Maximum reverse recovery time (NOTE 1)
trr
50
NOTE: 1. Test conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHz and applied reverse voltage of 4.0 v olts.
UNITS
V
μA
mA
ns
Document Number: DFM706AA
www.gmicroelec.com
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