EDB101S Datasheet, PDF (1/2 Pages) Rectron Semiconductor – GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)

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SILICON BRIDGE RECTIFIERS
EDB101S --- EDB106S
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
FEATURES
Rating to 400 V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plas tic material has UL flamm ability class ification
94V-O
Polarity sym bols molded on body
Weight: 1.0 grams
DB-S
.310(7.90)
.290(7.40)
.255(6.5)
.245(6.2)
.042(1.1)
.038(1.0)
.327(8.3)
.315(8.0)
.205(5.2)
.195(5.0)
.130(3.30)
.120(3.04)
.013(.330)
.003(.076)
.410(10.4)
.360(9.4)
.009
(.23)
.060(1.524)
.040(1.016)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EDB
101S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @T_A=55
Peak forw ard surge current
V_RRM 50
V_RMS
35
V_DC
50
I_F(AV)
8.3ms single half-sine-w ave
superimposed on rated load
I_FSM
Maximum instantaneous forw ard voltage
at 1.0 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (NOTE 1)
t_rr
Typical junction calacitance (NOTE 2)
C_J
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Test conditions: I_F=0.5A, I_R=-1.0A, I_RR=-0.25A.
2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts.
EDB
102S
100
70
100
EDB
103S
150
105
150
EDB
104S
200
140
200
1.0
30.0
1.0
10.0
1.0
50
15
- 55 ---- + 150
- 55 ---- + 150
EDB
105S
300
210
300
EDB
106S
400
280
400
UNITS
V
V
V
A
A
V
μA
mA
nS
10
pF
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Document Number 0287008
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