EDB101 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER

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SILICON BRIDGE RECTIFIERS
EDB101 --- EDB106
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
FEATURES
Rating to 400V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plas tic material has UL flamm ability class ification
94V-O
Polarity sym bols molded on body
Weight: 1.0 grams
DB-1
.255(6.5)
.245(6.2)
.310(7.9)
.290(7.4)
.365(9.3)
.355(9.0)
.060(1.5)
.020(.51)
.016(.41)
.205(5.2)
.195(5.0)
.135(3.4)
.155(2.9)
.165(4.2)
.155(3.9)
.350(8.9)
.300(7.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EDB
101
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @T_A=55
Peak forw ard surge current
V_RRM 50
V_RMS
35
V_DC
50
I_F(AV)
8.3ms single half-sine-w ave
superimposed on rated load
I_FSM
Maximum instantaneous forw ard voltage
at 1.0 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (NOTE 1)
t_rr
Typical junction calacitance (NOTE 2)
C_J
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Test conditions: I_F=0.5A, I_R=-1.0A, I_RR=-0.25A.
2. Measured at 1 MHz and applied rev erse v oltage of 4.0 v olts.
EDB
102
100
70
100
EDB
103
150
105
150
EDB
104
200
140
200
1.0
30.0
1.0
10.0
1.0
50
15
- 55 ---- + 150
- 55 ---- + 150
EDB
105
300
210
300
EDB
106
400
280
400
UNITS
V
V
V
A
A
V
μA
mA
nS
10
pF
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Document Number 0287009
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