DB3_03 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V

BL GALAXY ELECTRICAL
SILICON BIDIRECTIONAL DIACS
DB3.DB4
VOLTAGE RANGE: 28-45 V
FEATURES
The three layer,two termnal,axial lead,hermetically
1111sealed diacs are des igned s pecifically for triggering
1111thyristors .They demonstrate low breakover current at
1111breakover voltage as they withs tand peak pulse
1111current,The breakover s ymmetry is within three
1111volts(DB3,DB4). These diacs are intended for use in
CCCthyrisitors phase control,circuits for lamp dimming,
FFFI universal motor speed control,and heat control.
DO-35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3,DB4
UNITS
Power dissipation on printed
T_A=50^oC circuit (L=10mm)
Pc
Repetitive peak on-state tp=20 S
current
f=120Hz
I_TRM
Operating junction temperature
Storage temperature
T_J
T_STG
150.0
mW
2.0
A
-40--- +125
o_C
-40--- +125
o_C
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
Breakover voltage (NOTE 1)
Min
C=22nf(NOTE 2)
V_BO
See FIG.1
Typ
Max
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
I+V_BO I-
I-V_BOI
I± VI
C=22nf(NOTE 2)
See FIG.1
Max
I=(I_BO to I_F=10mA)
See FIG.1
Min
Output voltage (NOTE 1)
V_o
See FIG.2
Min
Breakover current (NOTE 1)
Rise time (NOTE 1)
Leakage current (NOTE 1)
I_BO
C=22nf(NOTE 2)
Max
t_r
See FIG.3
Typ
I_R
V_R=0.5 V_BO
See FIG.1
Max
NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions.
2.Connected in parallel w ith the devices
Document Number 0283003
BLGALAXY ELECTRICAL
DB3
DB4
28
35
32
40
36
45
±3.0
UNITS
V
V
5.0
V
5.0
V
100.0
A
1.5
S
10.0
A
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